electroluminescence articles & resources on Made-in-China.com

Monolithic Electrically Injected Microdisk Lasers on Silicon

Aug 1, 2017

Researchers in Russia claim “the first demonstration of an injection quantum well microdisk laser fabricated of III-V materials monolithically grown on silicon (001) substrate” [N. V. Kryzhanovskaya et al, Optics Express, vol. ...

Tags: silicon photonics, Lasers

Electrically Driven Single-Photon Emission From Atomically Thin Diodes

Oct 12, 2016

The UK's University of Cambridge and Japan's National Institute for Materials Science have developed single-photon emission devices using layers of graphene, hexagonal boron nitride (hBN), and transition-metal dichalcogenides (TMDs) [Carmen ...

Tags: single-photon emission devices, hBN

Indium Gallium Nitride Laser Diode Directly Integrated with Silicon

Sep 9, 2016

Researchers in China have achieved continuous wave (cw) lasing at room temperature for indium gallium nitride (InGaN) laser diodes (LDs) grown directly on silicon (Si) [Yi Sun et al, Nature Photonics, 10, p595, 2016]. The team from Suzhou ...

Tags: InGaN Laser diodes, cw, SINANO

Indium Gallium Arsenide Laser Diode on Exact Germanium-on-Silicon Substrate

Sep 9, 2016

Researchers in Russia have developed an indium gallium arsenide (InGaAs) quantum well laser diode on (001) germanium-on-silicon 'virtual substrate' without offcut angle [V. Ya. Aleshkin et al, Appl. Phys. Lett., vol109, p061111, 2016]. ...

Tags: InGaAs, Laser diodes, III-Vs-on-Si

Reducing Misfit Dislocations in Green Semi-Polar Light-Emitting Diodes

Aug 26, 2016

University of California Santa Barbara (UCSB) in the USA has used limited-area epitaxy (LAE) on semi-polar gallium nitride (GaN) substrates to reduce misfit dislocation (MD) densities in multiple quantum well (MQW) green light-emitting ...

Tags: LAE, GaN, LEDs

Monolithic Band-Engineered Semi-Polar White Light-Emitting Diode

Aug 12, 2016

University of California Santa Barbara (UCSB) in the USA has developed a monolithic white light-emitting diode (LED) with blue light produced by electrical pumping, and green/'red' by optical pumping from the blue source [S. J. Kowsz et al, ...

Tags: LED, UCSB

Relaxing Multiple Quantum Wells with Low-Temperature Barriers

Jul 27, 2016

South China University of Technology has used low-temperature barriers between indium gallium nitride (InGaN) multiple quantum wells (MQWs) to improve the light output power of light-emitting diodes (LEDs) by 23% to 63.83mW at 65mA [Zhiting ...

Tags: Low-Temperature Barriers, Quantum

Silicon Dioxide Charge Inverter Boosts Hole Injection in IngaN LEDs

Apr 21, 2016

Researchers based in China, Singapore and Turkey have used an extremely thin layer of silicon dioxide (SiO2) insulator as a charge inverter in indium gallium nitride (InGaN) light-emitting diodes (LEDs), improving light output power and ...

Tags: InGaN LEDs InGaN Silicon dioxide MOCVD

Gallium Nitride Nano-Sized LEDs

Apr 11, 2016

In 2014, the Nobel Prize in physics was awarded for the discovery of the gallium-nitride-based blue-light LED and its use for new, efficient LED-based white lamps. The development efforts in this field, however, do not stop there. The ...

Tags: LED, Nobel Prize

Demonstration of Novel High-Efficiency Blue LEDs on Silicon Substrates

Apr 6, 2016

Shigeya Kimura, Hisashi Yoshida, Toshihide Ito, Aoi Okada, Kenjiro Uesugi and Shinya Nunoue Metal organic chemical vapor deposition is used to grow aluminum gallium nitride interlayers within indium gallium nitride/gallium nitride ...

Tags: High-Efficiency Blue LEDs

Functional Printing To Shine At Drupa 2016

Mar 23, 2016

Functional printing will be a big focus at global printing trade fair drupa in May. The European Specialist Printing Manufacturers Association will host a pavilion dedicated to functional and industrial printing, with member companies ...

Tags: Drupa 2016, Printing

Thinning Buffer Layers for GaN-on-Silicon Light-Emitting Diodes

Dec 2, 2015

Plessey Semiconductors Ltd in the UK has been improving its indium gallium nitride (InGaN)-on-silicon light-emitting diode (LED) technology [Liyang Zhang et al, Journal of the Electron Devices Society, vol3, p457, 2015]. A light output ...

Tags: GaN-on-silicon LEDs, Plessey MOCVD

UCLA Study Finds Multilayer MoS2 as Potential New LED Material

Nov 19, 2015

Over the last decade, advances in the technology of light-emitting diodes, or LEDs, have helped to improve the performance of devices ranging from television and computer screens to flashlights. As the uses for LEDs expand, scientists ...

Tags: LEDs, MoS2, LED Material

Hole Injection From V-Pits Into Indium Gallium Nitride Quantum Wells

Nov 18, 2015

Researchers at Nanchang University in China have been studying the effect of V-pits in indium gallium nitride (InGaN) light-emitting diodes (LEDs) on electroluminescence [Xiaoming Wu, Junlin Liu, and Fengyi Jiang, J. Appl. Phys., vol118, ...

Tags: InGaN quantum wells, InGaN LEDs, InGaN

CNSI at UCLA Demonstrated The First Electroluminescence From MoS2

Jul 27, 2015

The California NanoSystems Institute (CNSI) at University of California Los Angeles (UCLA) has demonstrated the first electroluminescence from multi-layer molybdenum disulphide (MoS2), which could lead to a new class of materials for making ...

Tags: electronics, semiconductor, Molybdenum disulfide

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