Every LED maker wants to know the emission wavelength of its final device during metal-organic chemical vapour deposition (MOCVD) growth, says LayTec AG of Berlin, Germany (which makes in-situ metrology systems for thin-film processes, ...
Tags: LED maker, LED, LED structures, lighting
Cree Inc of Durham, NC, USA, which makes gallium nitride (GaN) RF components, and pan-European electronics distributor Acal BFi Ltd have signed a franchise agreement to increase the sale of Cree’s RF components in Italy, Spain, ...
Tags: Cree GaN RF, electronics, gallium nitride
Integra Technologies Inc of El Segundo, CA, USA, which supplies high-power pulsed RF transistors, says that its new IGN0110UM100 is a dual-lead packaged gallium nitride on silicon carbide (GaN-on-SiC) high-electron-mobility transistor ...
Tags: Integra GaN-on-SiC HEMT, high-power pulsed RF transistors
The U.S. Department of Energy recognized five research and development project teams last week at its tenth annual Solid-State Lighting R&D Workshop, held this year in Long Beach, CA. The three-day event brought together nearly 250 ...
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on ‘GaN on GaN’ (gallium nitride on gallium nitride) substrates, will sponsor a Lighting PlugFest in conjunction with Strategies ...
Tags: Soraa LEDs, Lighting, LED lamps
The global gallium nitride (GaN) semiconductor device market will grow at a compound annual growth rate (CAGR) of 18% over 2012-2016, forecasts a new report from TechNavio (the market research platform of Infiniti Research Ltd). ...
Tags: GaN Device, Lighting Market, Lighting
According to TechNavio, one of the key factors contributing to market growth in semiconductors is the high thermal conductivity of gallium nitride over other non-silicon substrates . The gallium nitride semiconductor devices market has ...
The inverter market grew significantly to $45bn in 2012, and will reach $71bn by 2020, according to Yole Développement in a report on ‘Inverter market trends for 2013-2020 and major technology changes’. “More than ...
UK-based etch and deposition system maker Oxford Instruments Plasma Technology (OIPT), a division of Oxford Instruments, has announced that applications specialist Stephanie Baclet will give a presentation entitled "High throughput for ...
Tags: Oxford Instruments GaN HB-LEDs Etch, Electronics, Lighting
The U.S. Department of Energy recognized five research and development project teams last week at its tenth annual Solid-State Lighting R&D Workshop, held this year in Long Beach, CA. The three-day event brought together nearly 250 ...
Tags: Energy, Lighting R&D Workshop, SSL technology developments
A team at Massachusetts Institute of Technology has developed an etch stop technique to improve performance of recessed-gate nitride semiconductor metal-insulator-semiconductor field-effect transistors (MISFETs) [Bin Lu et al, IEEE Electron ...
Tags: GaN MISFET GaN MOCVD, Electronics, Etch
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on ‘GaN on GaN’ (gallium nitride on gallium nitride) substrates, has announced the next generation of its high external quantum efficiency ...
Tags: Soraa GaN-on-GaN, LED, USA
University of Notre Dame (UND) in the USA and epiwafer maker IQE have claimed record-breaking balanced frequency performance for a nitride semiconductor high-electron-mobility transistor (HEMT) using indium aluminium gallium nitride ...
Soraa Inc of Fremont, CA, USA, which develops solid-state lighting technology built on ‘GaN on GaN’ (gallium nitride on gallium nitride) substrates, has received an award from the US Department of Energy for its work in the ...
Tags: Soraa GaN-on-GaN, Electronics, Lighting
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA has made available the EPC9004 development board, featuring the firm’s enhancement-mode gallium nitride on silicon (eGaN) field-effect transistors (FETs) for power ...
Tags: EPC, Power Systems, eGaN FETs