Researchers from Ohio State University (OSU) and University of California–Irvine (UCI) have developed a band engineering technique to improve the results from photo-electro-chemical (PEC) etch of nitride semiconductors [Prashanth ...
Singapore's Nanyang Technological University and Turkey's Bilkent University have developed a graded multiple quantum well (MQW) structure with the aim of increasing light output power and reducing efficiency droop in 450nm indium gallium ...
Tags: LED, LED Light, Electrical, Electronics
China's Nanjing University of Posts and Telecommunications has improved the performance of indium gallium nitride (InGaN) light-emitting diodes (LEDs) on silicon (Si) substrate by removing the substrate from the region under the device ...
Tags: Silicon wafer, Electrical, Electronics
Turkey's Bilkent University has used hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD) to make gallium nitride (GaN) thin-film transistors (TFTs) at temperatures below 250°C [S. Bolat et al, Appl. Phys. Lett., vol104, ...
Tags: HCPA-ALD GaN Thin-film transistors, Electrical, Electronics, Transistors
An international team of researchers has been exploring nanomembranes of beta-phase gallium oxide (β-Ga2O3) as a channel material for high-voltage field-effect transistors (FETs) [Wan Sik Hwang et al, Appl. Phys. Lett., vol104, ...
Tags: Electrical, Electronics, Transistor
University of California Santa Barbara (UCSB) and National Taiwan University (NTU) have been optimizing ammonia-based molecular beam epitaxy (MBE) for gallium nitride (GaN) growth on a range of substrates [Erin C. H. Kyle et al, J. Appl. ...
Tags: GaN MBE Veeco, Electrical, Electronics
The Group of III-V Semiconductors of the Solar Energy Institute at the Technical University of Madrid (Instituto de Energía Solar at Universidad Politécnica de Madrid, IES-UPM) has developed a highly conductive, high-bandgap ...
Researchers in Germany have developed two-dimensional hole gas (2DHG) gallium nitride (GaN) channel structures with record mobility [B Reuters et al, J. Phys. D: Appl. Phys., vol47, p175103, 2014]. Mobility for 2DHGs in GaN is usually ...
Tags: Electrical, Electronics
Researchers based in Singapore and Turkey have demonstrated a last quantum barrier (LQB) structure for indium gallium nitride (InGaN) light-emitting diodes (LEDs) that improves the electron blocking and hole injection of an aluminium ...
Tags: LEDs GaN InGaN MOCVD, Electrical, Electronics, LED
Researchers based in USA and South Korea have developed a gate stack for III-V quantum well metal-oxide-semiconductor field-effect transistors (QW MOSFETs) based on a bilayer dielectric of beryllium oxide (BeO) and hafnium dioxide (HfO2) ...
Tags: InGaAs MOSFETs QW MOSFETs InGaAs ALD, Electrical, Electronics
Researchers in Taiwan have produced indium gallium arsenide (InGaAs) metal-oxide-semiconductor capacitors (MOSCAPs) with low interface trap densities directly on silicon [Yueh-Chin Lin etal, Appl. Phys. Express, vol7, p041202, 2014]. InGaAs ...
ETH Zürich and Philips Technologie GmbH have developed 981nm-wavelength passively mode-locked electrically pumped vertical-external-cavity surface-emitting lasers (EP-VECSELs) with “the shortest pulses (2.5ps), highest average ...
Tags: EP-VECSELs InGaAs GaAs
Singapore's Nanyang Technological University has developed conventional aluminium gallium nitride (AlGaN) high-electron-mobility transistors (HEMTs) with record-breaking figures-of-merit (FOMs) for frequency and breakdown performance [Kumud ...
Tags: Electrical, Electronics
Fangliang Gao and Guoqiang Li of South China University of Technology have developed a technique to grow high-quality indium gallium arsenide (InGaAs) on gallium arsenide substrates using an ultrathin amorphous buffer [Appl. Phys. Lett., ...
Ammono S.A. in Warsaw, Poland, which produces bulk gallium nitride (GaN) using ammonothermal technology, and the Institute of High Pressure Physics of the Polish Academy of Sciences (Unipress) say they have conceived proprietary new ...