Deposition equipment maker Aixtron SE of Herzogenrath, Germany says that in Q2/2012 China's Peking University ordered a further Aixtron Close Coupled Showerhead (CCS) reactor with capacity for three 2-inch (3x2") substrates in a single run. ...
Kyma Technologies Inc of Raleigh, NC, USA, which provides crystalline gallium nitride (GaN), aluminum nitride (AlN) and aluminum gallium nitride (AlGaN) materials and related products and services, has completed its initial investigation ...
Tags: Kyma, Electrical, Electronics, crystalline gallium nitride
Advanced Micro-Fabrication Equipment Inc. (AMEC) will make its Solid-State Lighting (SSL) market debut with a new multi-reactor Metal Organic Chemical Vapor Deposition (MOCVD) cluster tool. The Prismo D-Blue™ MOCVD platform enables ...
Tags: AMEC, Solid-State Lighting, Lighting Market
The first millimeter-wave power demonstration of aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (GaN) grown on a (110) silicon substrate has been claimed by a French team of researchers [A. Soltani ...
A major challenge of in-situ metrology on single-port reactors with small viewport geometries is the combination of curvature measurements (by blue laser) with reflectance measurement at a wavelength of 405nm, says LayTec AG of Berlin, ...
Tags: LayTec, blue laser, reflectance measurement
At the SEMICON China show in Shanghai next week (19-21 March), Shanghai-based dielectric and through-silicon via (TSV) etch tool supplier Advanced Micro-Fabrication Equipment Inc (AMEC) is making its solid-state lighting (SSL) market debut ...
Tags: MOCVD, Electrical, Electronics
South Korea's Hongik University has developed a nitride semiconductor device on silicon with an embedded Schottky barrier diode (SBD) [Bong-Ryeol Park et al, Appl. Phys. Express, vol6, p031001, 2013]. The device was designed as a ...
Tags: Diode, semiconductor device, semiconductor
South Korea's Hongik University has developed a nitride semiconductor device on silicon with an embedded Schottky barrier diode (SBD) [Bong-Ryeol Park et al, Appl. Phys. Express, vol6, p031001, 2013]. The device was designed as a ...
Tags: Diode, semiconductor device, semiconductor
Researchers in China and Canada have developed air-bridge field plates for nitride semiconductor high-electron-mobility transistors (HEMTs) that increase the breakdown voltage and offer more stable performance at raised temperatures [Xie ...
Researchers based in South Korea and France have developed gallium nitride (GaN) fin field-effect transistors (FinFETs) with the lowest claimed subthreshold swing for nitride semiconductor metal-insulator-semiconductor FETs (MISFETs) ...
In a parallel effort to its development of UV-C light emitting diodes (LEDs), HexaTech recently demonstrated optically pumped, AlGaN-based lasers grown on highest-quality, single crystalline AlN substrates. Laser structures fabricated at ...
Every LED maker wants to know the emission wavelength of its final device during metal-organic chemical vapour deposition (MOCVD) growth, says LayTec AG of Berlin, Germany (which makes in-situ metrology systems for thin-film processes, ...
Tags: LED maker, LED, LED structures, lighting
HexaTech demonstrated optically pumped, AlGaN-based lasers grown on single crystalline AlN substrates , to develop its UV-C LEDs. Hexatech AlN wafer production process Laser structures fabricated at HexaTech and tested in ...
Tags: LEDs, UV-C LED, laser performance
Suzhou Institute of Nano-tech and Nano-bionics (SINANO) in China has been using double-gated nitride semiconductor high-electron-mobility transistors (HEMTs) to understand the effects of field-plates in improving dynamic performance [Guohao ...
Tags: SINANO, China, double-gated nitride semiconductor, HEMTs
In a parallel effort to its development of UV-C light-emitting diodes (LEDs), HexaTech Inc of Morrisville, NC, USA recently demonstrated optically pumped AlGaN-based lasers grown on single-crystalline aluminium nitride (AlN) substrates. ...
Tags: HexaTech, LEDs, AlN substrates