Cree announced that it had shipped more than two million GaN high electron mobility transistors (HEMT) for cellular telecommunications and provided game-changing benefits over traditional silicon-based technologies, involving higher power, ...
Cree Inc of Durham, NC, USA says it has now surpassed the milestone of shipping more than 2 million gallium nitride (GaN) high-electron-mobility transistors (HEMTs) for cellular telecommunications, providing benefits over traditional ...
Tags: Cree, Telecom Infrastructure
Synthetic diamond materials firm Luxembourg-registered Element Six (part of the De Beers Family of Companies, and co-owned by Belgian materials group Umicore) has acquired the assets and intellectual property of Group4 Labs Inc of Menlo ...
Tags: diamond materials, Electronics
Researchers in the USA at BAE Systems and Purdue University have developed atomic layer deposited (ALD) aluminium oxide as passivation for nitride semiconductor high-electron-mobility transistors (HEMTs) [Dong Xu et al, Electron Device ...
Tags: Oxide Passivation, Electronics, Atomic Layer
RF front-end component maker and foundry services provider TriQuint Semiconductor Inc of Hillsboro, OR, USA has produced what are reckoned to be the industry’s first gallium nitride (GaN) transistors using GaN-on-diamond wafers, which ...
Tags: Triquint, Electronics, HEMT devices
The UK’s Engineering and Physical Sciences Research Council (EPSRC) has awarded funding totaling more than £823,800m to two universities for the project ‘Novel High Thermal Conductivity Substrates for GaN Electronics: ...
Tags: Electrical, Electronics, GaN Electronics
The launch by the European Space Agency (ESA) of its Proba-V earth observation mini-satellite in the coming weeks will represent the first time that a European-made device based on gallium nitride (GaN) will be sent into space. This follows ...
Tags: Mini-Satellite, GaN
The first millimeter-wave power demonstration of aluminium gallium nitride/gallium nitride (AlGaN/GaN) high-electron-mobility transistors (GaN) grown on a (110) silicon substrate has been claimed by a French team of researchers [A. Soltani ...
Researchers in China and Canada have developed air-bridge field plates for nitride semiconductor high-electron-mobility transistors (HEMTs) that increase the breakdown voltage and offer more stable performance at raised temperatures [Xie ...
Efficient Power Conversion Corp (EPC) of El Segundo, CA, USA, which makes enhancement-mode gallium nitride on silicon (eGaN) power field-effect transistors (FETs) used in power management applications, will be presenting an educational ...
Tags: EPC, eGaN Technology, APEC
Suzhou Institute of Nano-tech and Nano-bionics (SINANO) in China has been using double-gated nitride semiconductor high-electron-mobility transistors (HEMTs) to understand the effects of field-plates in improving dynamic performance [Guohao ...
Tags: SINANO, China, double-gated nitride semiconductor, HEMTs
Researchers in Korea have used aluminium gallium nitride (AlGaN) heterostructures similar to high-electron-mobility transistors (HEMTs) to create Schottky barrier diodes (SBDs) with increased forward current without damaging the breakdown ...
Tags: aluminium gallium nitride, AlGaN, heterostructures, HEMTs
Researchers from GLOBALFOUNDRIES, SEMATECH, and Massachusetts Institute of Technology (MIT) have extended their indium arsenide quantum well metal-oxide-semiconductor field-effect transistor (InAs QW MOSFET) technology to some of the ...
Seoul National University and Korea Electronics Technology Institute have been developing hafnium dioxide (HfO2) as a gate insulator for aluminium gallium nitride (AlGaN) metal-oxide-semiconductor high-electron-mobility transistors ...
Tags: HfO2, gate insulator, Lights, Lighting
Researchers at University of Notre Dame and Kopin Corp have developed high-performance nitride semiconductor high-electron-mobility transistors (HEMTs) with indium gallium nitride (InGaN) channels [Ronghua Wang et al, Appl. Phys. Express, ...
Tags: semiconductor, high electron mobility transistors, InGaN