GaN Si articles & resources on Made-in-China.com

LayTec Details Accurate Wafer Temperature Measurement During GaN-on-Si MOCVD For Power Electronics

Mar 9, 2016

Temperature measurement during metal-organic chemical vapor deposition (MOCVD) growth of GaN-on-silicon (GaN/Si) devices is challenging, notes in-situ metrology system maker LayTec AG of Berlin, Germany. Theoretically, conventional infrared ...

Tags: MOCVD, GaN devices

Scandium Nitride Buffer for Gallium Nitride on Silicon Applications

Dec 8, 2015

Researchers in Germany are proposing scandium nitride (ScN) as a suitable buffer for gallium nitride (GaN) on silicon (Si) growth [L. Lupina et al, Appl. Phys. Lett., vol107, p201907, 2015]. The attraction of ScN is a very small mismatch ...

Tags: GaN devices, microscope

Report: Silicon to Play Major Role in LED Production

Nov 5, 2015

In a dramatic change from the status quo, nearly half of all gallium nitride (GaN) LEDs will be produced on silicon substrates by the end of the decade. That’s according to a new report by analysts at IHS, who forecast that the ...

Tags: LED Production, GaN LEDs, sapphire wafers

Infineon Introduces GaN Devices for Mobile Base Station Transmitters

Nov 5, 2015

Infineon Technologies AG introduced its first devices in a family of Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistors at this year's European Microwave Week. As part of Infineon’s industry-leading GaN portfoliothe ...

Tags: Infineon, GaN devices, mobile station transmitters

Infineon Introduces GaN Devices for Mobile Base-Station Transmitters; Charts Path to 5G Cellular Infrastructure

Sep 15, 2015

In booth C309 (Hall Ternes) at European Microwave Week (EuMW 2015) in Paris, France (6-11 September), Infineon Technologies AG of Munich, Germany has introduced its first devices in a family of gallium nitride on silicon carbide ...

Tags: EuMW 2015, GaN-on-silicon, GaN-on-SiC, PA

IHS Predicts Rapid Transition to GaN-on-Silicon LED Manufacture for Backlighting

Dec 16, 2013

silicon to play major role in LED production 13 Dec 2013 IHS predicts rapid transition to GaN-on-silicon LED manufacture for backlighting and some general lighting applications. Silicon switch In a dramatic change from the status ...

Tags: IHS, LED Production, LED

HKUST Developed a 600V GaN/Si Normally-Off MIS-HEMT

Oct 16, 2013

Hong Kong University of Science and Technology (HKUST) has developed a 600V gallium nitride on silicon (GaN/Si) normally-off metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) with large gate swing and low current ...

Tags: GaN MIS-HEMTs AlGaN, Electrical, Electronics

TurboDisc MaxBright® MHP™ GaN MOCVD Multi-Reactor System

Jul 2, 2013

TurboDisc MaxBright® MHP™ GaN MOCVD Multi-Reactor System Veeco MOCVDs are crucial to LED chip production. The quality, efficiency, and yield of epitaxial wafers may affect the cost and output of the LED epitaxial wafer plant. ...

Tags: LED MOCVD, LED Equipments

Verticle Extended Its Range of Vertically Structured InGaN-based LED Chips

May 21, 2013

Verticle Inc of Dublin, CA, USA has extended its range of Honeycomb hexagonal-shaped vertically structured InGaN-based LED chips from blue wavelengths (in mass production since February 2012) to ultraviolet (UV). As with the firm’s ...

Tags: LED Chip, Verticle

GaN on Silicon(001) HEMT Growth Aided by Laytec's Epicurve TT

Dec 17, 2012

LayTec AG of Berlin, Germany (which makes in-situ metrology systems for thin-film processes, focusing on compound semiconductor and photovoltaic applications) says that at last October’s International Workshop on Nitride ...

Tags: LayTec AG, metrology systems, HEMT

Reducing Noise at High Frequency in Nitride-on-Silicon Transistors

Aug 10, 2012

Reducing noise at high frequency in nitride-on-silicon transistors France’s Institute of Electronic, Microelectronic and Nanotechnology (IEMN) has produced the first benchmark for low-noise gallium nitride on silicon transistors in ...

Tags: GaN/Si HEMTs MOCVD IEMN, Lights, Lighting, nitride-on-silicon transistors

PAM-Xiamen Has Announced The Availability of 2''-Diameter Native SI GaN Substrates

Jul 12, 2012

China's Xiamen Powerway Advanced Material Co Ltd (PAM-Xiamen), which supplies ultra-high purity crystalline gallium nitride (GaN) and aluminium gallium nitride (AlGaN) materials and other related products and services, has announced the ...

Tags: Free-standing, SI, carbide

IEMN Has Demonstrated High-Power-Density Nitride High-Electron-Mobility Transistors

Jun 20, 2012

20 June 2012 First 40GHz 2.5W/mm output performance of GaN/Si HEMTs Institute for Electronics,Microelectronics and Nanotechnology(IEMN)in France has demonstrated high-power-density nitride high-electron-mobility transistors(HEMTs)on ...

Tags: GaN/Si HEMTs, IEMN, AlGaN

Singapore and Hong Kong Researchers Have Developed a Gold-Free CMOS-Compatible Process

Jun 7, 2012

Singapore and Hong Kong researchers have developed a gold-free CMOS-compatible process for nitride semiconductor metal–oxide–semiconductor high-electron-mobility transistors(MOS-HEMTs)[Xinke Liu et ...

Tags: Nitride MOS-HEMTs MOCVD, MOS-HEMTs, AlGaN

LayTec AG Has Announced Its Last Call for Those Wishing to Attend Firm's in-Situ Seminar

May 9, 2012

LayTec AG of Berlin,Germany(which makes in-situ metrology systems for thin-film processes,focusing on compound semiconductor and photovoltaic applications)has announced its last call for those wishing to attend the firm's in-situ seminar ...

Tags: LayTec AG of Berlin, inSitu Monitoring, 16th International Conference

GaN Si

Related Products