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Si Substrates
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China's Launches First Automotive Lighting Plant
Nov 16, 2016Jiangxi Luye Auto Lighting launched the first automotive lighting LED module plant in Nanchang Optical Valley in China, reported Xinhua. The LED automotive module manufacturing facility values RMB 500 million (US $72.97 million) in total, ...
Tags: Auto Lighting, LED Lighting
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Reducing Subthreshold Swing of Gallium Arsenide Transistors
Sep 28, 2016Korea Institute of Science and Technology (KIST) claims a record low subthreshold swing of 68mV/decade for a gallium arsenide (GaAs) field-effect transistor (FET) [SangHyeon Kim et al, IEEE Electron Device Letters, published online 24 ...
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Epigan's Production Facility Certified as Compliant to ISO9001: 2015
Jun 30, 2016EpiGaN nv of Hasselt, near Antwerp, Belgium, which supplies commercial-grade 150mm- and 200mm-diameter gallium nitride on silicon (GaN-on-Si) epitaxial wafers, says that on 7 June it received official notification from the International ...
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Epitaxial Growth of Laser Diodes on Wafer-Bonded InP/Si Substrates
Jun 12, 2016Sophia University in Japan has developed a technique for growing laser diodes on an indium phosphide (InP) layer bonded to silicon (Si) [Keiichi Matsumoto et al, Appl. Phys. Express, vol9, p062701, 2016]. The researchers claim that this is ...
Tags: Laser Diodes, Si Substrates
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Fully Vertical Gallium Nitride P-I-N Diode Grown on Silicon Substrate
Apr 29, 2016Researchers in Hong Kong and China have claimed the first demonstration of gallium nitirde (GaN) fully vertical p-type-intrinsic-n-type (p-i-n) junction diodes on silicon (Si) [Xinbo Zou et al, IEEE Electron Device Letters, published online ...
Tags: GaN devices, Silicon Substrate
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Aixtron's AIX G5+ C Qualified for Manufacturing of High-Voltage GaN-on-Si Materials in Joint Project with Imec
Apr 19, 2016Deposition equipment maker Aixtron SE of Herzogenrath, near Aachen, Germany says that its G5+ C multi-wafer batch metal-organic chemical vapor deposition (MOCVD) platform has been qualified for the manufacturing of specific buffer layers as ...
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Demonstration of Novel High-Efficiency Blue LEDs on Silicon Substrates
Apr 6, 2016Shigeya Kimura, Hisashi Yoshida, Toshihide Ito, Aoi Okada, Kenjiro Uesugi and Shinya Nunoue Metal organic chemical vapor deposition is used to grow aluminum gallium nitride interlayers within indium gallium nitride/gallium nitride ...
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High-Performance Gallium Nitride on Low-Resistance Silicon
Aug 31, 2015University of Glasgow and University of Cambridge in the UK have claimed the highest frequency performance to date for gallium nitride (GaN) high-electron-mobility transistors (HEMTs) on low-resistivity (LR) silicon (Si) [A. Eblabla et al, ...
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KTH-Royal Institute Create Heterojunctions Consisting of N-InP and P-Type Silicon
Jun 16, 2015KTH-Royal Institute of Technology in Sweden has used corrugated epitaxial lateral overgrowth (CELOG) to create heterojunctions consisting of n-type indium phosphide (n-InP) and p-type silicon (p-Si) [Y. T. Sun et al, Appl. Phys. Lett., ...
Tags: corrugated epitaxial, silicon
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Epistar Commences Producing Integrated Power Drivers Based on Si Substrates
Apr 1, 2015LED epitaxial wafer and chip maker Epistar has developed silicon substrate applications for integrating power drivers on single-chip devices, with volumes of such devices being 75% smaller than those of conventional models, and the company ...
Tags: LED epitaxial wafer, Lights
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A Low-Temperature PAMBE Process for Direct Growth of InGaN on Silicon Substrates
Mar 24, 2015Researchers in Europe have developed a low-temperature plasma-assisted molecular beam epitaxy (PAMBE) process for direct growth of indium gallium nitride (InGaN) on silicon (Si) substrates [Pavel Aseev et al, Appl. Phys. Lett., vol106, ...
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ALLOS Acquired The Exclusive Ownership of All Technology of The Former AZZURRO Semi AG
Dec 17, 2014ALLOS Semiconductors GmbH of Dresden, Germany, which was founded in June, says that it has acquired (via auction) the exclusive ownership of all technology, know-how and intellectual property of the former AZZURRO Semiconductors AG, which ...
Tags: patent landscape, market, technology strategy, Electrical
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The Need for High-Power Is Increasing Steadily, Commensurate with The Huge Demand
May 29, 2014The need for high-power, high-frequency transistors is increasing steadily, commensurate with the huge demand for wireless telecommunications, notes market research firm Yole Développement in its report ‘RF GaN Technology & ...
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China's LED Chip Technology Development Trends
May 12, 2014LED chips are a core component in the LED industry. There are currently many domestic and international LED chip manufacturers in China, but there currently are no categorization standards, according to a report by Chinese-language ...
Tags: LED Industry, LED Chips
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MIT Has Demonstrated GaN Vertical Schottky and P-N Diodes
May 7, 2014Massachusetts Institute of Technology (MIT) has demonstrated gallium nitride (GaN) vertical Schottky and p-n diodes on silicon Si substrates “for the first time” [Yuhao Zhang et al, IEEE Electron Device Letters, published online ...
Tags: GaN, MOCVD, Gallium Nitride Diodes
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