Arizona State University (ASU) in the USA claims the first demonstration of 1kV-class aluminium nitride (AlN) Schottky barrier diodes (SBDs) [Houqiang Fu et al, IEEE Electron Device Letters, 5 July 2017]. AlN has a wide bandgap of 6.2eV. ...
Tags: semiconductor, MOCVD
Researchers at Hong Kong University of Science and Technology (HKUST) are proposing using III-nitride and silicon carbide (SiC) hybrid technologies for high-voltage power devices [Jin Wei et al, IEEE Transactions on Electron Devices, vol63, ...
In 2014, the Nobel Prize in physics was awarded for the discovery of the gallium-nitride-based blue-light LED and its use for new, efficient LED-based white lamps. The development efforts in this field, however, do not stop there. The ...
Tags: LED, Nobel Prize
Researchers in Germany are proposing scandium nitride (ScN) as a suitable buffer for gallium nitride (GaN) on silicon (Si) growth [L. Lupina et al, Appl. Phys. Lett., vol107, p201907, 2015]. The attraction of ScN is a very small mismatch ...
Tags: GaN devices, microscope
While lasers were invented in 1960 and are commonly used in many applications, one characteristic of the technology has proven unattainable. No one has been able to create a laser that beams white light. Researchers at Arizona State ...
Tags: ASU, White Lasers, LEDs
The US Department of Energy's Oak Ridge National Laboratory (ORNL) has for the first time, it is claimed, combined a novel synthesis process with commercial electron-beam lithography techniques to produce arrays of semiconductor junctions ...
Tags: electronics, semiconductor, Heterojunctions
Solar Junction Corp (SJC) of San Jose, CA, USA, which makes what are reckoned to be the highest-efficiency commercially available multi-junction solar cells for terrestrial concentrated photovoltaic (CPV) applications, has announced plans ...
k-Space Associates Inc of Dexter, MI, USA (which supplies thin-film metrology tools for the semiconductor, compound semiconductor and solar markets) has reported revenue for its patented kSA BandiT wafer and film temperature monitoring ...
Tags: k-Space, Electronic Materials, Electrical
The US Department of Energy (DOE)’s National Renewable Energy Laboratory (NREL) has demonstrated a conversion efficiency of 45.7% for a four-junction solar cell at 234 suns concentration, representing one of the highest photovoltaic ...
Tags: CPV Solar Cell, Electrical
Fangliang Gao and Guoqiang Li of South China University of Technology have developed a technique to grow high-quality indium gallium arsenide (InGaAs) on gallium arsenide substrates using an ultrathin amorphous buffer [Appl. Phys. Lett., ...
University of California Santa Barbara (UCSB) and Fuji Electric Corp of America have been developing indium gallium nitride (InGaN) solar cell structures in efforts to extend the conversion efficiency of multi-junction photovoltaic (PV) ...
Tags: Nitride Barriers, Electrical
Yokohama-based Silvaco Japan Co Ltd - a branch of Silvaco Inc of Santa Clara, CA, USA, a provider of technology computer-aided design (TCAD), circuit simulation and electronic design automation (EDA) software tools - says that the ...
Taiwan’s National Tsing Hua University has developed a method to improve the performance of zinc oxide (ZnO) transparent conductive oxide (TCO) as an electrode for short-wavelength nitride semiconductor light-emitting diodes (LEDs) ...
Tags: zinc oxide, LEDs
Researchers based in the USA have used a double-heterostructuring based on order-disorder properties of aluminium indium phosphide (AlInP) to produce 'amber-green' light-emitting diodes (LEDs) [Theresa M. Christian et al, J. Appl. Phys., ...
Tags: LEDs, Electrical, Electronics
On 19 June at the 39th IEEE Photovoltaic Specialists Conference (PVSC 39) in Tampa, FL, scientist Myles Steiner at the US Department of Energy's National Renewable Energy Laboratory (NREL) reported record energy conversion efficiency of ...
Tags: Solar Cell, Electrical, Electronics, cell