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Panasonic Develops Insulated-Gate MIS GaN Power Transistor Capable of Continuous Stable Operation

Feb 24, 2018

Panasonic Corp of Osaka, Japan has developed an insulated-gate metal-insulator-semiconductor (MIS) gallium nitride (GaN) power transistor capable of continuous stable operation with no variation in its threshold gate voltage. This makes it ...

Tags: Panasonic, Power Transistor

Bi-Directional Silicon Carbide Planar Insulated-Gate Bipolar Transistor

Jul 5, 2016

Rensselaer Polytechnic Institute and General Electric Global Research Center in the USA "experimentally demonstrate, for the first time, bi-directional 4H-silicon carbide planar gate, insulated-gate bipolar transistors (IGBTs) fabricated on ...

Tags: Bipolar Transistor

Gallium Nitride Thin-Film Transistors Produced at Less Than 250ºC

Jul 10, 2014

Turkey's Bilkent University has used hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD) to make gallium nitride (GaN) thin-film transistors (TFTs) at temperatures below 250°C [S. Bolat et al, Appl. Phys. Lett., vol104, ...

Tags: HCPA-ALD GaN Thin-film transistors, Electrical, Electronics, Transistors

An International Team of Researchers Has Been Exploring Nanomembranes

Jun 16, 2014

An international team of researchers has been exploring nanomembranes of beta-phase gallium oxide (β-Ga2O3) as a channel material for high-voltage field-effect transistors (FETs) [Wan Sik Hwang et al, Appl. Phys. Lett., vol104, ...

Tags: Electrical, Electronics, Transistor

UCSB Researchers Have Been Studying The Effect of Using Undoped Vertical Spacers

Dec 16, 2013

University of California Santa Barbara (UCSB) researchers have been studying the effect of using undoped vertical spacers in the source and drain contacts to reduce off-state leakage in indium arsenide (InAs)-channel ...

Tags: Electrical, Electronics, Mosfets

HKUST Developed a 600V GaN/Si Normally-Off MIS-HEMT

Oct 16, 2013

Hong Kong University of Science and Technology (HKUST) has developed a 600V gallium nitride on silicon (GaN/Si) normally-off metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) with large gate swing and low current ...

Tags: GaN MIS-HEMTs AlGaN, Electrical, Electronics

Germany-Based Researchers Claim a Record on-Current

Aug 27, 2013

Germany-based researchers claim a record on-current for an enhancement-mode (e-mode) gallium nitride (GaN) metal insulator semiconductor heterostructure field-effect transistor (MISHFET) on silicon (Si) substrate [Herwig Hahn et al, Jpn. J. ...

Tags: Electrical, Electronics, E-Mode

Hongik University Has Developed a Nitride Semiconductor Device

Mar 12, 2013

South Korea's Hongik University has developed a nitride semiconductor device on silicon with an embedded Schottky barrier diode (SBD) [Bong-Ryeol Park et al, Appl. Phys. Express, vol6, p031001, 2013]. The device was designed as a ...

Tags: Diode, semiconductor device, semiconductor

Hongik University Has Developed a Nitride Semiconductor Device on Silicon

Mar 12, 2013

South Korea's Hongik University has developed a nitride semiconductor device on silicon with an embedded Schottky barrier diode (SBD) [Bong-Ryeol Park et al, Appl. Phys. Express, vol6, p031001, 2013]. The device was designed as a ...

Tags: Diode, semiconductor device, semiconductor

MIT Extended Their Indium Arsenide Quantum Well Metal-Oxide-Semiconductor

Jan 23, 2013

Researchers from GLOBALFOUNDRIES, SEMATECH, and Massachusetts Institute of Technology (MIT) have extended their indium arsenide quantum well metal-oxide-semiconductor field-effect transistor (InAs QW MOSFET) technology to some of the ...

Tags: transistors, semiconductor, indium aluminium arsenide

HfO2 Has Superior Blocking Characteristics, Surface Passivation Properties

Jan 18, 2013

Seoul National University and Korea Electronics Technology Institute have been developing hafnium dioxide (HfO2) as a gate insulator for aluminium gallium nitride (AlGaN) metal-oxide-semiconductor high-electron-mobility transistors ...

Tags: HfO2, gate insulator, Lights, Lighting

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