Plasma etch, deposition and thermal processing equipment maker SPTS Technologies Ltd of Newport, Wales, UK (a Bridgepoint portfolio company) has reached a milestone in shipping its 1000th deep reactive ion etch (DRIE) module. Fundamental ...
Tags: SPTS, Electronics
Plasma etch, deposition and thermal processing equipment maker SPTS Technologies Ltd of Newport, Wales, UK (a Bridgepoint portfolio company) has won a Queen’s Award for Enterprise in International Trade. The award recognizes the ...
Tags: SPTS, Electronics
Institute of Electronic, Microelectronic and Nanotechnology (IEMN) in France has developed a gallium nitride (GaN) on silicon (Si) high-electron-mobility transistor (HEMT) with a power gain cut-off frequency of 220GHz and a three-terminal ...
Tags: GaN-on-Si HEMT, EpiGaN MOCVD PECVD
Taiwan National Tsing Hua University has been studying ways to improve the modulation performance of high-output-power nitride semiconductor light-emitting diodes (LEDs) [Chien-Lan Liao et al, IEEE Electron Device Letters, published online ...
Tags: GaN InGaN LEDs, LED, Electrical, Electronics, taiwan
Plasma etch, deposition and thermal processing equipment maker SPTS Technologies Ltd of Newport, Wales, UK says it has received multiple orders from several European research and development (R&D) institutions, including the Delft Institute ...
Tags: SPTS Etch SiC, Electrical, Electronics, thermal processing equipment
Plasma etch, deposition and thermal processing equipment maker SPTS Technologies Ltd of Newport, Wales, UK, has been shortlisted for the annual Management Team Awards organized by British Private Equity and Venture Capital Association ...
FlexTech Alliance announced the completion of a development project with Etched in Time, Inc. (EITI), for a plasma etch system that is compatible with a wide array of roll-to-roll equipment. The result of the project is a tool that can be ...
Tags: LED lighting, solar panels, LED
Suzhou Institute of Nano-tech and Nano-bionics (SINANO) in China has been using double-gated nitride semiconductor high-electron-mobility transistors (HEMTs) to understand the effects of field-plates in improving dynamic performance [Guohao ...
Tags: SINANO, China, double-gated nitride semiconductor, HEMTs
Taiwan researchers have used a self-textured oxide mask (STOM) as a template to enhance the external quantum efficiency (EQE) of nitride 380nm ultraviolet (UV) light-emitting diodes (LEDs) by up to 83% [Kun-Ching Shen et al, IEEE Electron ...
Tags: LED light, LED, LED light extraction
UK-based Oxford Instruments Plasma Technology (OIPT) reports that its first workshop held at MIT’s Microsystems Technology Laboratories (MTL), Cambridge, MA in December was well attended. The workshop addressed the latest research and ...
Tags: OIPT, Plasma, ALD PECVD, Microsystems Technology Laboratories
Two Yale University researchers have developed epitaxial distributed Bragg reflectors (DBRs) in nitride semiconductors with reflectivities of more than 98% [Danti Chen and Jung Han, Appl. Phys. Lett., vol101, p221104, 2012]. Further, the ...
UK-based etch,deposition and growth system maker Oxford Instruments Plasma Technology(OIPT),part of Oxford Instruments plc,has introduced PT Elements,a free to download iPad App offering a clear and interactive periodic table of ...
Tags: OIPT, Oxford Instruments, Plasma Etch&Deposition Processing
Singapore researchers report "for the first time" the DC and microwave characteristics of submicron-gate aluminium gallium nitride on gallium nitride (AlGaN/GaN) high-electron-mobility transistors (HEMTs) on 8-inch (200mm) diameter Si(111) ...
Tags: MOCVD
UK-based etch,deposition and growth system maker Oxford Instruments Plasma Technology(OIPT),part of Oxford Instruments plc,and MIT's Microsystems Technology Laboratories(MTL)of Cambridge,MA,USA will hold a 1 day seminar addressing the ...
UK-based Oxford Instruments plc has received an order for a PlasmaPro System100 ICP180 etch tool from the Otto-von-Guericke University Magdeburg, Germany. The system will run GaN on Si etch processes to facilitate the university's power ...
Tags: GaN on Si